SDD36 Datasheet | Sirectifier Semiconductors

FEATURES - International standard package - Copper base plate - Planar passivated chips - Isolation voltage 3600 V~ APPLICATIONS - Supplies for DC power equipment - DC supply for PWM inverter - Field supply for DC motors - Battery DC power supplies ADVANTAGES - Space and weight savings - Simple mounting - Improved temperature and power cycling - Reduced protection circuits Diode-Diode Modules .. Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD36 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature .. 3 x SDD36 Fig. 6 Transient thermal impedance junction to case (per diode) Rth JC for various conduction angles d: d DC 180o C 120o C 60o C 30o C Rth JC (K/W) 1.00 1.02 1.04 1.07 1.10 Constants for Zth JC calculation: i 1 2 3 Rthi (K/W) 0.01 0.03 0.96 ti (s) 0.0012 0.095 0.455 Fig. 7 Transient thermal impedance junction to heatsink (per diode) Rth JK for various conduction angles d: d DC 180o C 120o C 60o C 30o C Rth JK (K/W) 1.20 1.22 1.24 1.27 1.30 Constants for Zth JK calculation: i 1 2 3 4 Rthi (K/W) 0.01 0.03 0.96 0.2 ti (s) 0.0012 0.095 0.455...