STD18GKxx Datasheet | Sirectifier Semiconductors

STD/SDT18 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 .. STD/SDT18GK08 STD/SDT18GK12 STD/SDT18GK14 STD/SDT18GK16 STD/SDT18GK18 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85o C; 180o sine TVJ=45o C VR=0 TVJ=TVJM VR=0 TVJ=45o C VR=0 TVJ=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A di G/dt=0.45A/us Test Conditions Maximum Ratings 40 18 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=45A 400 420 350 370 800 730 600 570 150 A i dt A2s (di/dt)cr A/us non repetitive, IT=ITAVM 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 V/us W W V o (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=300us 50/60Hz, RMS _ IISOL<1m A t=1min t=1s 3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 90 V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M5) Typical including screws STD/SDT18 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values 3 2.05 0.85 18 VD=6V; VD=6V; TVJ=TVJM; o Unit m A V V m V m A V m A m A m A us us u C A K/W K/W mm mm m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO r T .. IT, IF=80A; TVJ=25 C For power-loss calculations only (TVJ=125o C) o o VGT IGT TVJ=25 C TVJ=-40o C TVJ=25o C TVJ=-40o C...