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STT200 - Thyristor

Key Features

  • International standard package.
  • Direct copper bonded Al2O3-ceramic base plate.
  • Planar passivated chips.
  • Isolation voltage 3600 V~.

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Datasheet Details

Part number STT200
Manufacturer Sirectifier Semiconductors
File Size 358.66 KB
Description Thyristor
Datasheet download datasheet STT200 Datasheet

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Other Datasheets by Sirectifier Semiconductors

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STT253 Thyristor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT200 Thyristor-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 STT200GK08 STT200GK12 STT200GK14 STT200GK16 STT200GK18 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 Test Conditions Maximum Ratings 314 200 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=750A 8000 8500 7000 7600 38000 34000 30000 27000 250 800 A i dt 2 A2s TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=1A www.DataSheet4U.