SUR60100PT Datasheet | Sirectifier Semiconductors

SUR6080PT thru SUR60120PT Ultra Fast Recovery Epitaxial Diodes A C(TAB) A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 .. A=Anode, C=Cathode, TAB=Cathode SUR6080PT SUR60100PT SUR60120PT VRSM V 800 1000 1200 VRRM V 800 1000 1200 J K L M N Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=85o C; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45o C t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 70 30 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 Unit A IFSM TVJ=150o C TVJ=45o C I2t TVJ=150o C A2s TVJ TVJM Tstg Ptot Md Weight TC=25o C Mounting torque o 138 0 1.2 6 W Nm g SUR6080PT thru SUR60120PT Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25o C; VR=VRRM TVJ=25o C; VR=0.8.VRRM TVJ=125o C; VR=0.8.VRRM IF=30A; TVJ=150o C TVJ=25o C For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 750 250 7 2.2 2.55 1.65 18.2 0.9 0.25...