SUR6020 Datasheet | Sirectifier Semiconductors

Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C .. Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 200 VRRM V 200 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=85o C; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45o C t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 98 60 800 600 650 540 580 1800 1770 1460 1410 -40...+150 150 -40...+150 Unit A IFSM TVJ=150o C TVJ=45o C I2t TVJ=150o C A2s TVJ TVJM Tstg Ptot Md Weight TC=25o C Mounting torque o 150 0 1.2 6 W Nm g Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25o C; VR=VRRM TVJ=25o C; VR=0.8.VRRM TVJ=125o C; VR=0.8.VRRM IF=60A; TVJ=150o C TVJ=25o C For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 50 40 11 0.88 1.08 0.70 4.0 0.75 0.25 35 Unit u A u A m A V V m K/W VF .. VTO r T Rth JC Rth CK Rth JA trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25o C _ VR=100V; IF=60A; -di F/dt=200A/us; L<0.05u H; TVJ=100 C o 35 8 50 10 ns A Features - International standard package JEDEC...