SUR6080 Datasheet | Sirectifier Semiconductors

SUR6080 thru SUR60120 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C .. Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 800 1000 1200 VRRM V 800 1000 1200 SUR6080 SUR60100 SUR60120 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=60o C; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45o C t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 100 60 800 500 540 450 480 1250 1200 1000 950 -40...+150 150 -40...+150 Unit A IFSM TVJ=150o C TVJ=45o C I2t TVJ=150o C A2s TVJ TVJM Tstg Ptot Md Weight TC=25o C Mounting torque o 189 0 1.2 6 W Nm g SUR6080 thru SUR60120 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25o C; VR=VRRM TVJ=25o C; VR=0.8.VRRM TVJ=125o C; VR=0.8.VRRM IF=60A; TVJ=150o C TVJ=25o C For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 3 0.5 14 1.8 2.3 1.43 6.1 0.66 0.25 35 Unit IR m A V V m K/W VF .. VTO r T Rth JC Rth CK Rth JA trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25o C _ VR=540V; IF=60A; -di F/dt=480A/us; L<0.05u H; TVJ=100 C...