Sirectifier SDD120
Diode-Diode Modules
MAXIMUM RATINGS
180 120 2800 3300 2500 2750 39200 45000 31200 31300 -40...+150 150 -40...+125 3000 3600 2.5-4/22-35 2.5-4/22-35 90 Unit A A A2s oC V~ Nm/lb.in. g SDD120 Diode-Diode Modules Symbol Test Conditions IR VF VTO rT QS IRM RthJC RthJK dS dA a TVJ=TVJM; VR=VRRM IF=300A; TVJ=25oC For power-loss calculations only TVJ=TVJM TVJ=125oC; IF=50A; -di/dt=6A/us per diode; DC current per module per diode; DC current per module Creepage distance on surface Strike distance through air Maximum allowable acceleration Characteristic Values 15 1.43 0.75 1.95 170 45 0.26 0.13 0.46 0.23 12.7 9.6 50 Unit mA V V m uC A K/W K/W mm mm m/s2FEATURES
* International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~APPLICATIONS
* Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD120 Diode-Diode Modules Fig.