SDD120N12 Overview
g SDD120 Diode-Diode Modules Symbol Test Conditions IR VF VTO rT QS IRM RthJC RthJK dS dA a TVJ=TVJM; TVJ=25oC For power-loss calculations only TVJ=TVJM TVJ=125oC; DC current per module per diode;.
SDD120N12 Key Features
- International standard package
- Copper base plate
- Planar passivated chips
- Isolation voltage 3600 V~
SDD120N12 Applications
- Supplies for DC power equipment
- DC supply for PWM inverter
- Field supply for DC motors