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SDD120N12 Datasheet Diode-Diode Modules

Manufacturer: Sirectifier

Download the SDD120N12 datasheet PDF. This datasheet also includes the SDD120 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SDD120-Sirectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SDD120N12
Manufacturer Sirectifier
File Size 0.98 MB
Description Diode-Diode Modules
Datasheet download datasheet SDD120N12 Datasheet

Overview

SDD120 Diode-Diode Modules Type SDD120N08 SDD120N12 SDD120N14 SDD120N16 SDD120N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") Symbol Test Conditions IFRMS IFAVM IFSM i2dt TVJ=TVJM TC=105oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ TVJM Tstg VISOL 50/60Hz, RMS IISOL<_1mA t=1min t=1s Md Mounting torque (M5) Terminal connection torque (M5) Weight Typical including screws Maximum Ratings 180 120 2800 3300 2500 2750 39200 45000 31200 31300 -40...+150 150 -40...+125 3000 3600 2.5-4/22-35 2.5-4/22-35 90 Unit A A A2s oC V~ Nm/lb.in.

g SDD120 Diode-Diode Modules Symbol Test Conditions IR VF VTO rT QS IRM RthJC RthJK dS dA a TVJ=TVJM; VR=VRRM IF=300A; TVJ=25oC For power-loss calculations only TVJ=TVJM TVJ=125oC; IF=50A; -di/dt=6A/us per diode; DC current per module per diode; DC current per module Creepage distance on surface Strike distance through air Maximum allowable acceleration Characteristic Values 15 1.43 0.75 1.95 170 45 0.26 0.13 0.46 0.23 12.7 9.

Key Features

  • International standard package.
  • Copper base plate.
  • Planar passivated chips.
  • Isolation voltage 3600 V~.

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