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SBF-5089 - Cascadable InGaP/GaAs HBT MMIC Amplifier

General Description

Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier.

A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance.

Key Features

  • Available in Lead Free, RoHS compliant, & Green packaging.
  • IP3 = 41dBm @ 240MHz.
  • Stable Gain Over Temperature.
  • Robust 1000V ESD, Class 1C.
  • Operates From Single Supply.
  • Low Thermal Resistance 0 -5 -10 -15 -20 -25 -30 -35 -40 IRL, ORL (dB) Gain(dB).

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Datasheet Details

Part number SBF-5089
Manufacturer Sirenza Microdevices
File Size 237.88 KB
Description Cascadable InGaP/GaAs HBT MMIC Amplifier
Datasheet download datasheet SBF-5089 Datasheet

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Other Datasheets by Sirenza Microdevices

Part Number Description
SBF-5089Z Cascadable InGaP/GaAs HBT MMIC Amplifier
SBF-4089 Cascadable InGaP/GaAs HBT MMIC Amplifier
SBF-4089Z Cascadable InGaP/GaAs HBT MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Description Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.