SGA-1163 Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (Si Ge HBT) amplifier that offers excellent isolation and flat gain response for applications to 6 GHz. This RFIC is a 2-stage design that provides high isolation of up to 40d B at 2 GHz and is fabricated using the latest Si Ge HBT 50 GHz FT process, featuring 1 micron emitters with Vceo > 7V. These unconditionally stable amplifiers have less than 1d B gain drift over 125ºC operating range (-40C to +85C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM and narrowband PCS bands. Isolation vs. Frequency 0 -20 DC-6000 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features • DC-6000 MHz Operation • Excellent Isolation, >50 d B at 900 MHz • Single Supply Voltage • Unconditionally Stable • 50 Ohms In/Out, Broadband Match for Operation from DC - 6 GHz d B -40 -60 -80 100 500 900 1900 2400 3500 6000 Applications • Buffer Amplifier for Oscillator Applications • Broadband, High Isolation Frequency MHz Sy mbol P 1d B S 21 Parameters: Test C onditions: Z0 = 50 Ohms, Id = 12 m A, T = 25ºC Output Power at 1d B C ompressi on f = 850 MHz f = 1950 MHz f = D C - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 6000 MHz f = D C - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 6000 MHz f = D C - 2400 MHz f = 2400 - 6000 MHz f = D C - 2400 MHz f = 2400 - 6000 MHz f = 850 MHz f = 1950 MHz f = D C - 1000 MHz f = 1000 - 2400 MHz f = 1000 MHz U nits d B m d B m d B d B d B d B d B d B d B m d B m d B d B p S V m A 4.2 10 10.5 Min. Ty p. -3.3 -4.6 11.7 11.2 9.5 53.3 38.3 28.5 1.3:1 1.8:1 2.1:1 2.2:1 7.9 6.3 3.1 3.4 118 4.6 12 5.0 14 Max. Small Si gnal Gai n S 12 S11 S 22 IP3 NF TD VD ID Reverse Isolati on Input VSWR Output VSWR Thi rd Order Intercept Poi nt Power out per Tone = -20 d Bm Noi se Fi gure Group D elay D evi ce Operati ng Voltage D evi ce Operati ng C urrent The information provided herein is believed to be reliable at press time. Sirenza...