• Part: SGA-4363
  • Description: Cascadable SiGe HBT MMIC Amplifier
  • Manufacturer: Sirenza Microdevices
  • Size: 252.47 KB
Download SGA-4363 Datasheet PDF
Sirenza Microdevices
SGA-4363
SGA-4363 is Cascadable SiGe HBT MMIC Amplifier manufactured by Sirenza Microdevices.
Description The SGA-4363 is a high performance Si Ge HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. Gain & Return Loss vs. Frequency VD= 3.2 V, ID= 45 m A (Typ.) SGA-4363Z Pb Ro HS pliant & Green Package DC-4000 MHz, Cascadable Si Ge HBT MMIC Amplifier Product Features - Now available in Lead Free, Ro HS pliant, & Green Packaging - High Gain : 14.8 d B at 1950 MHz - Cascadable 50 Ohm - Operates From Single Supply - Low Thermal Resistance Package Return Loss (d B) Gain (d B) GAIN IRL -10 -20 -30 -40 0 1 2 3 4 Frequency (GHz) 5 6 Applications - - - - PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 12 6 0 Symbol G Parameter Small Signal Gain Units d B Frequency 850 MHz 1950 MHz 2400 Mhz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 15.5 Typ. 17.5 14.8 14.2 14.3 13.0 28.7 25.7 4000 Max. 19.0 P1d B OIP3 Output Pow er at 1d B pression Output Third Order Intercept Point d Bm d Bm MHz d B d B d B V m A °C/W Bandw idth Determined by Return Loss (>9d B) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 8 V RBIAS = 110 Ohms 1950 MHz 1950 MHz 1950 MHz 2.9 41 14.4 10.7 3.1 3.2 45 255 3.5 49 Test...