• Part: SGA-4386Z
  • Description: Cascadable SiGe HBT MMIC Amplifier
  • Manufacturer: Sirenza Microdevices
  • Size: 86.66 KB
Download SGA-4386Z Datasheet PDF
Sirenza Microdevices
SGA-4386Z
SGA-4386Z is Cascadable SiGe HBT MMIC Amplifier manufactured by Sirenza Microdevices.
Description The SGA-4386 is a high performance Si Ge HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. SGA-4386 SGA-4386Z Pb Ro HS pliant & Green Package DC-4500 MHz, Cascadable Si Ge HBT MMIC Amplifier The matte tin finish on Sirenza’s lead-free package utilizes a post Product Features annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manu- - Now available in Lead Free, Ro HS factured with green molding pounds that contain no antimony pliant, & Green Packaging trioxide nor halogenated fire retardants. - High Gain : 14.6 d B at 1950 MHz Gain & Return Loss vs. Frequency - Cascadable 50 Ohm 0 -10 Return Loss (d B) 24 18 Gain (d B) VD= 3.2 V, ID= 45 m A (Typ.) - Operates From Single Supply - Low Thermal Resistance Package Applications - - - - PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite GAIN -20 -30 -40 0 1 2 3 Frequency (GHz) 4 5 6 0 Symbol G Parameter Small Signal Gain Units d B Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 15.0 Typ. 17.0 14.6 13.7 15.3 13.0 28.9 26.9 4500 Max. 18.5 P1d B OIP3 Output Pow er at 1d B pression Output Third Order Intercept Point d Bm d Bm MHz d B d B d B V m A °C/W Bandw idth Determined by Return Loss (>10d B) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 8 V RBIAS = 110 Ohms 1950 MHz 1950 MHz 1950 MHz 2.9 41 13.2 15.2 3.1 3.2 45 97 3.5 49 Test...