SGA-8343 Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (Si Ge HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. Gain, Gmax (d B) NFMIN (d B) 40 35 30 25 20 15 10 5 0 Typical Performance - 3V, 10m A NFMIN Gmax Gain 123 4567 Frequency (GHz) 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 8 SGA-8343 SGA-8343Z Pb Ro HS pliant & Green Package Preliminary Low Noise, High Gain Si Ge HBT Product Features - Now Available in Lead Free, Ro HS pliant, & Green Packaging - DC-6 GHz Operation - 0.9 d B NFMIN @ 0.9 GHz - 24 d B Gmax @ 0.9 GHz - |GOPT|=0.10 @ 0.9 GHz - OIP3 = +28 d Bm, P1d B = +9 d Bm - Low Cost, High Performance, Versatility Applications - Analog and Digital Wireless Systems - 3G, Cellular, PCS, RFID - Fixed Wireless, Pager Systems - Driver Stage for Low Power Applica- tions - Oscillators Symbol Device Characteristics Test Conditions VCE=3V, ICQ=10m A, 25°C (unless otherwise noted) Test Frequency Units Min. Typ....