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SGA-8343 - Cascadable SiGe HBT MMIC Amplifier

Download the SGA-8343 datasheet PDF. This datasheet also covers the SGA-8343Z variant, as both devices belong to the same cascadable sige hbt mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz.

The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems.

Key Features

  • Now Available in Lead Free, RoHS Compliant, & Green Packaging.
  • DC-6 GHz Operation.
  • 0.9 dB NFMIN @ 0.9 GHz.
  • 24 dB Gmax @ 0.9 GHz.
  • |GOPT|=0.10 @ 0.9 GHz.
  • OIP3 = +28 dBm, P1dB = +9 dBm.
  • Low Cost, High Performance, Versatility.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGA-8343Z_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGA-8343
Manufacturer Sirenza Microdevices
File Size 99.45 KB
Description Cascadable SiGe HBT MMIC Amplifier
Datasheet download datasheet SGA-8343 Datasheet

Other Datasheets by Sirenza Microdevices

Part Number Description
SGA-8343Z LOW NOISE HIGH GAIN SIGE HBT
SGA-0163 Silicon Germanium Cascadeable Gain Block
SGA-0163Z Silicon Germanium Cascadeable Gain Block
SGA-0363 Silicon Germanium Cascadeable Gain Block
SGA-0363Z Silicon Germanium Cascadeable Gain Block
SGA-1163 DC-6000 Mhz Silicon Germanium HBT Cascadeable Gain Block
SGA-1263 Cascadable SiGe HBT MMIC Amplifier
SGA-2163 Cascadable SiGe HBT MMIC Amplifier
SGA-2163Z Cascadable SiGe HBT MMIC Amplifier
SGA-2186 Cascadable SiGe HBT MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.