SGA-8343Z Description
Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost.
SGA-8343Z Key Features
- Now Available in Lead Free, RoHS pliant, & Green Packaging
- DC-6 GHz Operation
- 0.9 dB NFMIN @ 0.9 GHz
- 24 dB Gmax @ 0.9 GHz
- GOPT|=0.10 @ 0.9 GHz
- OIP3 = +28 dBm, P1dB = +9 dBm
- Low Cost, High Performance, Versatility