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SGA-8343Z - LOW NOISE HIGH GAIN SIGE HBT

General Description

Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz.

The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems.

Key Features

  • Now Available in Lead Free, RoHS Compliant, & Green Packaging.
  • DC-6 GHz Operation.
  • 0.9 dB NFMIN @ 0.9 GHz.
  • 24 dB Gmax @ 0.9 GHz.
  • |GOPT|=0.10 @ 0.9 GHz.
  • OIP3 = +28 dBm, P1dB = +9 dBm.
  • Low Cost, High Performance, Versatility Gain, Gmax (dB) NFMIN.

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Datasheet Details

Part number SGA-8343Z
Manufacturer Sirenza Microdevices
File Size 99.45 KB
Description LOW NOISE HIGH GAIN SIGE HBT
Datasheet download datasheet SGA-8343Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.