SGA-8343Z Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (Si Ge HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. Typical Performance - 3V, 10m A 40 35 30 25 20 15 10 5 0 0 1 2 2 .4 2 .1 1 .8 1 .5 1 .2 Gmax Gain SGA-8343 SGA-8343Z Pb Ro HS pliant & Green Package Low Noise, High Gain Si Ge HBT Preliminary Product Features - Now Available in Lead Free, Ro HS pliant, & Green Packaging - DC-6 GHz Operation - 0.9 d B NFMIN @ 0.9 GHz - 24 d B Gmax @ 0.9 GHz - |GOPT|=0.10 @ 0.9 GHz - OIP3 = +28 d Bm, P1d B = +9 d Bm - Low Cost, High Performance, Versatility Gain, Gmax (d B) NFMIN Applications - - - - Analog and Digital Wireless Systems 3G, Cellular, PCS, RFID Fixed Wireless, Pager Systems Driver Stage for Low Power Applications - Oscillators NFMIN (d B) 0 .9 0 .6 0 .3 0 6 7 8 3 4 5 Frequency (GHz) Symbol D evice C haracteristics Test C onditions VCE=3V, ICQ=10m A, 25°C (unless otherw ise noted) Test Frequency U nits Min. Typ. Max. GMAX Maxi mum Avai lable Gai n ZS=ZS- , ZL=ZL- 0.9 GHz 1.9 GHz 2.4 GHz 0.9 GHz 1.9 GHz 2.4 GHz 0.9 GHz 1.9 GHz 1.9 GHz 1.9 GHz 1.9 GHz d...