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SGA-9189 - Cascadable SiGe HBT MMIC Amplifier

Download the SGA-9189 datasheet PDF. This datasheet also covers the SGA-9189Z variant, as both devices belong to the same cascadable sige hbt mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz.

With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm.

This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process.

Key Features

  • Available in RoHS compliant Green packaging.
  • 50-3000 MHz Operation.
  • 39 dBm Ouput IP3 Typical at 1.96 GHz.
  • 12.2 dB Gain Typical at 1.96 GHz.
  • 25.5 dBm P1dB Typical at 1.96 GHz.
  • 2.1 dB NF Typical at 0.9 GHz.
  • Cost Effective.
  • 3-5 V Operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGA-9189Z_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGA-9189
Manufacturer Sirenza Microdevices
File Size 102.01 KB
Description Cascadable SiGe HBT MMIC Amplifier
Datasheet download datasheet SGA-9189 Datasheet

Other Datasheets by Sirenza Microdevices

Part Number Description
SGA-9189Z Medium Power Discrete SiGe Transistor
SGA-9289Z Medium Power Discrete SiGe Transistor
SGA-0163 Silicon Germanium Cascadeable Gain Block
SGA-0163Z Silicon Germanium Cascadeable Gain Block
SGA-0363 Silicon Germanium Cascadeable Gain Block
SGA-0363Z Silicon Germanium Cascadeable Gain Block
SGA-1163 DC-6000 Mhz Silicon Germanium HBT Cascadeable Gain Block
SGA-1263 Cascadable SiGe HBT MMIC Amplifier
SGA-2163 Cascadable SiGe HBT MMIC Amplifier
SGA-2163Z Cascadable SiGe HBT MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.