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SGA-9189 - Cascadable SiGe HBT MMIC Amplifier

This page provides the datasheet information for the SGA-9189, a member of the SGA-9189Z Cascadable SiGe HBT MMIC Amplifier family.

Datasheet Summary

Description

Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz.

With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm.

This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process.

Features

  • Available in RoHS compliant Green packaging.
  • 50-3000 MHz Operation.
  • 39 dBm Ouput IP3 Typical at 1.96 GHz.
  • 12.2 dB Gain Typical at 1.96 GHz.
  • 25.5 dBm P1dB Typical at 1.96 GHz.
  • 2.1 dB NF Typical at 0.9 GHz.
  • Cost Effective.
  • 3-5 V Operation.

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Datasheet preview – SGA-9189

Datasheet Details

Part number SGA-9189
Manufacturer Sirenza Microdevices
File Size 102.01 KB
Description Cascadable SiGe HBT MMIC Amplifier
Datasheet download datasheet SGA-9189 Datasheet
Additional preview pages of the SGA-9189 datasheet.

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Full PDF Text Transcription

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Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
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