SGA-9189 Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 d Bm and P1d B=25.5 d Bm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (Si Ge HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. Gmax (d B) OIP3, P1d B (d Bm) Typical Gmax, OIP3, P1d B @ 5V,180m A OIP3 Gmax P1d B 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Frequency (GHz) SGA-9189 SGA-9189Z Pb Ro HS pliant & Green Package Medium Power Discrete Si Ge Transistor Product Features - Available in Ro HS pliant Green packaging - 50-3000 MHz Operation - 39 d Bm Ouput IP3 Typical at 1.96 GHz - 12.2 d B Gain Typical at 1.96...