SGA-9289Z Datasheet PDF - Sirenza Microdevices Medium Power Discrete SiGe Transistor Specs

SGA-9289Z - Medium Power Discrete SiGe Transistor

Datasheet Summary

Description

Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz.

With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm.

This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process.

Features

Available in RoHS compliant Green packaging 50-3000 MHz Operation 42.5 dBm Ouput IP3 Typical at 1.96 GHz 12.0 dB Gain Typical at 1.96 GHz 27.5 dBm P1dB Typical at 1.96 GHz 2.4 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation Typical Gmax, OIP3, P1dB @ 5V,270mA 25 23 21 19 44 OIP3 42 38 36 17 15 13 11 9 7 5 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Gmax OIP3, P1dB (dBm) 40 Gmax (dB) 34 32 30 28 26 24 Applic.

Datasheet Details

Part number	SGA-9289Z
Manufacturer	Sirenza Microdevices
File Size	103.34 KB
Description	Medium Power Discrete SiGe Transistor
Datasheet	SGA-9289Z Datasheet
Additional preview pages of the SGA-9289Z datasheet.

📁 Similar Datasheet

SGA-1263 - DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK (RFMD)

SGA-1263Z - DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK (RFMD)

SGA-2286 - CASCADABLE SiGe HBT MMIC AMPLIFIER (RFMD)

SGA-2286Z - CASCADABLE SiGe HBT MMIC AMPLIFIER (RFMD)

SGA-3486 - CASCADABLE SiGe HBT MMIC AMPLIFIER (RFMD)

SGA-3486Z - CASCADABLE SiGe HBT MMIC AMPLIFIER (RFMD)

SGA - ARINC 600 Rack and Panel Connectors (ITT Industries)

SGA0363Z - SILICON GERMANIUM CASCADABLE GAIN BLOCK (RFMD)

SGA1263Z - DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK (RFMD)

SGA2163Z - CASCADABLE SiGe HBT MMIC AMPLIFIER (RFMD)

Full PDF Text Transcription

Click to expand full text

Preliminary Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.

Published: May 10, 2007 |