• Part: SGA-9289Z
  • Description: Medium Power Discrete SiGe Transistor
  • Category: Transistor
  • Manufacturer: Sirenza Microdevices
  • Size: 103.34 KB
Download SGA-9289Z Datasheet PDF
Sirenza Microdevices
SGA-9289Z
SGA-9289Z is Medium Power Discrete SiGe Transistor manufactured by Sirenza Microdevices.
Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 d Bm and P1d B=27.5 d Bm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (Si Ge HBT) process. The SGA-9289 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. SGA-9289 SGA-9289Z Pb Ro HS pliant & Green Package Medium Power Discrete Si Ge Transistor Product Features - - - - - - - - Available in Ro HS pliant Green packaging 50-3000 MHz Operation 42.5 d Bm Ouput IP3 Typical at 1.96 GHz 12.0 d B Gain Typical at 1.96 GHz 27.5 d Bm P1d B Typical at 1.96 GHz 2.4 d B NF Typical at 0.9 GHz Cost Effective 3-5 V Operation Typical Gmax, OIP3, P1d B @ 5V,270m A 25 23 21 19 44 OIP3 42 38 36 17 15 13 11 9 7 5 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Gmax OIP3, P1d B (d Bm) Gmax (d B) 34 32 30 28 26 24 Applications - - - - Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-022 contains detailed application circuits P1d B Frequency (GHz) Symbol Test Frequency Device Characteristics, T = 25ºC [1] 100% Tested VCE = 5V, ICQ =280m A (unless otherw ise noted) [2] Sample Tested Maximum Available Gain ZS=ZS- , ZL=ZL- Power Gain ZS=ZSOPT, ZL=ZLOPT Output 1d B pression Point ZS=ZSOPT, ZL=ZLOPT Output Third Order Intercept Point ZS=ZSOPT, ZL=ZLOPT, POUT= +13 d Bm per tone Noise Figure ZS=ZSOPT, ZL=ZLOPT Collector - Emitter Breakdown Voltage DC current gain Thermal Resistance (junction-to-lead) Operating Voltage (collector-to-emitter) Operating Current f = 900 MHz f = 1960 MHz f = 900 MHz [1] f =...