SHF-0189 Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SHF-0189 is a high performance Al Ga As/Ga As Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1d B pression for the SHF-0189 is +27 d Bm when biased for Class AB operation at 8V,100m A. The +40 d Bm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless munication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems. SHF-0189 SHF-0189Z Pb Ro HS pliant & Green Package - 6 GHz, 0.5 Watt Ga As HFET The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Product Features Directive 2002/95. This package is also manufactured with green...