SHF-0189Z Description
Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB pression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA.
SHF-0189Z Key Features
- Now available in Lead Free, RoHS pounds that contain no antimony trioxide nor halogenated fire retarpliant, & Green Pack
- High Linearity Performance at 1.96 GHz +27 dBm P1dB +40 dBm Output IP3 +16.5 dB Gain
- High Drain Efficiency
- See App Note AN-031 for circuit details