Datasheet4U Logo Datasheet4U.com

SHF-0189Z - GaAs HFET

Download the SHF-0189Z datasheet PDF. This datasheet also covers the SHF-0189 variant, as both devices belong to the same gaas hfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.

The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Key Features

  • Directive 2002/95. This package is also manufactured with green molding.
  • Now available in Lead Free, RoHS compounds that contain no antimony trioxide nor halogenated fire retarCompliant, & Green Packaging dants. Typical Gain Performance (8V,100mA) 35 30 25 20 15 10 5 0 -5 0 1 2 3 4 5 6 Frequency (GHz) 7 8 Gain, Gmax (dB) Gmax.
  • High Linearity Performance at 1.96 GHz +27 dBm P1dB +40 dBm Output IP3 +16.5 dB Gain.
  • High Drain Efficiency.
  • See App Note AN-031 for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SHF-0189_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SHF-0189Z
Manufacturer Sirenza Microdevices
File Size 102.80 KB
Description GaAs HFET
Datasheet download datasheet SHF-0189Z Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SHF-0189Z 0.5WATT GaAs HFET RFMD
SHF-0189 0.5WATT GaAs HFET RFMD
SHF-0186 DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET ETC
SHF-0186K DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET ETC
SHF-0289 1.0 Watt GaAs HFET ETC

Other Datasheets by Sirenza Microdevices

Part Number Description
SHF-0189 GaAs HFET
SHF-0289Z GaAs HFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems. SHF-0189 SHF-0189Z Pb RoHS Compliant & Green Package 0.05 - 6 GHz, 0.