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SPF-3143Z - Low Noise pHEMT GaAs FET

General Description

Sirenza Microdevices’ SPF-3143Z is a high performance 0.5μm pHEMT Gallium Arsenide FET.

This 600μm device is ideally biased at 3V, 20mA for lowest noise performance and battery powered requirements.

At 5V, 40mA the device can deliver OIP3 of 32.5 dBm.

Key Features

  • Available in Lead free, RoHS compliant, & Green packaging.
  • DC-3.5 GHz Operation.
  • 0.58 dB NFMIN @ 2 GHz.
  • 21 dB GMAX @ 2 GHz.
  • +31 dBm OIP3 (5V,40mA).
  • +17.7 dBm P1dB (5V,40mA).
  • Low Current, Low Cost.
  • Apps circuits available for key bands 40 35 30 25 20 15 10 5 0 0 5V 40mA Gain, Gmax (dB) 3V 20mA Gmax Gain.

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Datasheet Details

Part number SPF-3143Z
Manufacturer Sirenza Microdevices
File Size 142.53 KB
Description Low Noise pHEMT GaAs FET
Datasheet download datasheet SPF-3143Z Datasheet

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Full PDF Text Transcription (Reference)

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SPF-3143Z Product Description Sirenza Microdevices’ SPF-3143Z is a high performance 0.5μm pHEMT Gallium Arsenide FET. This 600μm device is ideally biased at 3V, 20mA for lowest noise performance and battery powered requirements. At 5V, 40mA the device can deliver OIP3 of 32.5 dBm. It provides ideal performance as a driver stage in many commercial and industrial LNA applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.