SPF-3143Z
SPF-3143Z is Low Noise pHEMT GaAs FET manufactured by Sirenza Microdevices.
Description
Sirenza Microdevices’ SPF-3143Z is a high performance 0.5μm p HEMT Gallium Arsenide FET. This 600μm device is ideally biased at 3V, 20m A for lowest noise performance and battery powered requirements. At 5V, 40m A the device can deliver OIP3 of 32.5 d Bm. It provides ideal performance as a driver stage in many mercial and industrial LNA applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. Typical Gain Performance
Pb
Ro HS pliant & Green Package
Low Noise p HEMT Ga As FET
Product Features
- Available in Lead free, Ro HS pliant, & Green packaging
- DC-3.5 GHz Operation
- 0.58 d B NFMIN @ 2 GHz
- 21 d B GMAX @ 2 GHz
- +31 d Bm OIP3 (5V,40m A)
- +17.7 d Bm P1d B (5V,40m A)
- Low Current, Low Cost
- Apps circuits available for key bands
40 35 30 25 20 15 10 5 0 0
5V 40m A
Gain, Gmax (d B)
3V 20m A
Gmax Gain
Applications
- -
- - Analog and Digital Wireless Systems 3G, Cellular, PCS Fixed Wireless, Pager Systems Driver Stage for Low Power Applications
Frequency (GHz)
Test Conditions
..
Symbol
Parameters
VDS=5V, IDQ=40m A, 25C (unless otherwise noted)
Units
Test Frequency (GHz)
Min.
Typ.
Max.
GMAX NFMIN S21 NF Gain OIP3 P1d B VP IDSS gm BVGSO BVGDO VDS IDS RTH, j-l
Maximum Available Gain Minimum Noise Figure Insertion Gain Noise Figure Gain Output Third Order Intercept Point Output Power at 1d B pression Pinchoff Voltage Saturated Drain Current Transconductance Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Device Operating Voltage Device Operating Current Thermal Resistance...
