DDB2503-230 Key Features
- Available in both P-type and N-type low barrier designs
- Low 1/f noise
- Packages rated MSL1, 260 C per JEDEC J-STD-020
- Part: DDB2503-230
- Manufacturer: Skyworks Solutions
- Size: 588.43 KB
Related Skyworks Solutions Datasheets
| Part Number | Description |
|---|---|
| DDB2503-220 | Silicon Schottky Barrier Diodes |
| DDB2503-250 | Silicon Schottky Barrier Diodes |
| DDB2503-000 | Silicon Schottky Barrier Diode Bondable Chips and Beam Leads |
| DDB2504-000 | Silicon Schottky Barrier Diode Bondable Chips and Beam Leads |
| DDB2504-220 | Silicon Schottky Barrier Diodes |
DDB2503-230 Description
Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control.