DDB2504-000 Key Features
- Available in both P-type and N-type low barrier designs
- Low 1/f noise
- Large bond pad chip design
- Planar passivated beam-lead and chip construction
- Part: DDB2504-000
- Manufacturer: Skyworks Solutions
- Size: 591.88 KB
Related Skyworks Solutions Datasheets
| Part Number | Description |
|---|---|
| DDB2504-220 | Silicon Schottky Barrier Diodes |
| DDB2504-230 | Silicon Schottky Barrier Diodes |
| DDB2504-250 | Silicon Schottky Barrier Diodes |
| DDB2503-000 | Silicon Schottky Barrier Diode Bondable Chips and Beam Leads |
| DDB2503-220 | Silicon Schottky Barrier Diodes |
DDB2504-000 Description
Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control.