Download the DDB2504-250 datasheet PDF.
This datasheet also covers the DDB2503-220 variant, as both devices belong to the same silicon schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.
General Description
Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band.
They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.
Key Features
Available in both P-type and N-type low barrier designs.
Full PDF Text Transcription for DDB2504-250 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
DDB2504-250. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications Detectors Mixers Features Available in both P-type and N-type low bar...
View more extracted text
ectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also availabl
DDB2504-250 Datasheet
