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SL100HR170TL - IGBT Module

General Description

Conditions Min Typ VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE 5.5 6.0 VCE(sat) Collector-Emitter Saturat

Key Features

  • z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 2.30V @ IC =100A , TC=25℃ z Low Switching Loss z 100% RBSOA Tested(2×Ic) z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement.

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Datasheet Details

Part number SL100HR170TL
Manufacturer Slkor
File Size 454.25 KB
Description IGBT Module
Datasheet download datasheet SL100HR170TL Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Module SL100H R170TL Features: z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 2.30V @ IC =100A , TC=25℃ z Low Switching Loss z 100% RBSOA Tested(2×Ic) z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement Applications: z Industrial Inverters z Motor Drives z UPS Systems IGBT, Inverter Maximum Rated Values (TC=25℃Unless otherwise specified) VCES VGES IC ICM tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current TC = 80℃, TC = 25℃ Repetitive Peak Collector Current Short Circuit Withstand Time Maximum Power Dissipation per IGBT TJ = 150℃ TC = 25℃ TJmax=150℃ 1700 ±20 100 135 200 >10 620 V V A A A μs W www.slkormicro.