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P-Channel Power MOSFET
General Features
VDS =-60V,ID =-11A RDS(ON) <180 mΩ @ VGS=-10V RDS(ON) <220 mΩ @ VGS=-4.5V
Improved dv/dt capability Fast switching Good stability and uniformity with high EAS Excellent package for good heat dissipation
Applications
Power switching application Hard switched and high frequency circuits LED Lighting
SL11P06D
Schematic diagram TO252 Pin Configuration
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃)
Pulsed Drain Current Maximum Power Dissipation (TC=25℃) Derating factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID(25℃)
ID (100℃)
IDM PD
TJ,TSTG
Limit
-60 ±20 -11 -8 -28 15.6 0.
SL11P06D Datasheet
