SL11P06D Datasheet | Slkor Micro Semicon

Features - VDS =-60V,ID =-11A RDS(ON) <180 mΩ @ VGS=-10V RDS(ON) <220 mΩ @ VGS=-4.5V - Improved dv/dt capability - Fast switching - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Applications - Power switching application - Hard switched and high frequency circuits - LED Lighting Schematic diagram TO252 Pin Configuration Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃) Pulsed Drain Current Maximum Power Dissipation (TC=25℃) Derating factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID(25℃) ID (100℃) IDM PD TJ,TSTG Limit -60 ±20 -11 -8 -28 15.6 0.125 -50 To 150 Unit V V A A A W W/℃ ℃ .slkormicro. Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC Electrical Characteristics (TC=25℃unless otherwise noted) ℃/W Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Forward Turn-On...