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N-Channel Power MOSFET
General Features
VDS =30V,ID =150A RDS(ON) <1.6 mΩ @ VGS=10V RDS(ON) <2.4 mΩ @ VGS=4.5V
Improved dv/dt capability High density cell design for ultra low Rdson Good stability and uniformity with high EAS Excellent package for good heat dissipation
Applications
Power switching application MB/VGA/Server Vcore POL Applications
SL150N03Q
Schematic diagram DFN5X6-8L top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃)
Pulsed Drain Current Maximum Power Dissipation Derating factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID(25℃)
ID (100℃)
IDM PD
TJ,TSTG
Limit
30 ±20 150 82 520 166 1.
SL150N03Q Datasheet
