SL150N03Q
Overview
- VDS =30V,ID =150A RDS(ON) <1.6 mΩ @ VGS=10V RDS(ON) <2.4 mΩ @ VGS=4.5V
- Improved dv/dt capability
- High density cell design for ultra low Rdson
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
