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SL8205 - N-CHANNEL MOSFET

Features

  • Uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltages as low as 2.5V. /Marking:8205 /Notes: 1.:。Repetitive Rating: Pulse width limited by maximum junction temperature. 2.FR4,t≤10。Surface Mounted on FR4 Board, t ≤ 10 sec. 3.:≤300μs,≤2%。Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2%. www. slkormicro. com 1 SL8205 www. slkormicro. com 2.

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Datasheet Details

Part number SL8205
Manufacturer Slkor
File Size 1.22 MB
Description N-CHANNEL MOSFET
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SL8205 N-Channel Power MOSFET Symbol VDS ID(Ta=25℃) ID(Ta=70℃) IDM VGS PD(Ta=25℃) TJ,TSTG RθJA Rating 20 6 4.8 20 ±8.0 1.14 -55 to 150 110 Unit V A A A V W ℃ ℃/ W /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS(Tj=25℃) VDS=20V VGS=0V IDSS(Tj=70℃) VDS=16V VGS=0V IGSS VGS=±10V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=4.5V VGS=2.5V ID=6.0A ID=5.2A gFS VDS=10V ID=6.0A VSD VGS=0V IS=1.7A Ciss Coss VDS=20V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDS=10V ID=1A RD=10Ω VGS=5V RG=6Ω tf Min 20 0.5 Typ Max 20 1035 320 150 30 70 40 65 1 25 ±100 1.5 28 38 1.2 Unit V μA μA nA V mΩ mΩ S V pF pF pF ns ns ns ns :,。 Purpose: Use as a Battery protection or in other Switching application. :, RDS(on),, 2.
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