Click to expand full text
SL8205
N-Channel Power MOSFET
Symbol
VDS ID(Ta=25℃) ID(Ta=70℃) IDM VGS PD(Ta=25℃) TJ,TSTG RθJA
Rating
20 6 4.8 20 ±8.0 1.14 -55 to 150 110
Unit
V A A A V W ℃ ℃/ W
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS(Tj=25℃) VDS=20V
VGS=0V
IDSS(Tj=70℃) VDS=16V
VGS=0V
IGSS
VGS=±10V
VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=4.5V VGS=2.5V
ID=6.0A ID=5.2A
gFS
VDS=10V
ID=6.0A
VSD
VGS=0V
IS=1.7A
Ciss
Coss
VDS=20V VGS=0V f=1.0MHz
Crss
td(on)
tr td(off)
VDS=10V ID=1A RD=10Ω
VGS=5V RG=6Ω
tf
Min 20
0.5
Typ
Max
20
1035 320 150 30 70 40 65
1 25 ±100 1.5 28 38
1.2
Unit
V μA μA nA
V mΩ mΩ S V pF pF pF ns ns ns ns
:,。 Purpose: Use as a Battery protection or in other Switching application. :, RDS(on),, 2.