SL8205 - N-CHANNEL MOSFET

Key Features

Uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltages as low as 2.5V. /Marking：8205 /Notes: 1.：。Repetitive Rating: Pulse width limited by maximum junction temperature. 2.FR4，t≤10。Surface Mounted on FR4 Board, t ≤ 10 sec. 3.：≤300μs，≤2％。Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2%. www. slkormicro. com 1 SL8205 www. slkormicro. com 2.

SL8205 n-channel mosfet by Slkor - Datasheet Preview

Datasheet Details

Part number	SL8205
Manufacturer	Slkor
File Size	1.22 MB
Description	N-CHANNEL MOSFET
Datasheet	SL8205 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SL8204	TELEPHONE TONE RINGER	Plessey
SL811HS	Embedded USB Host/Slave Controller	Cypress Semiconductor

Other Datasheets by Slkor

Part Number	Description
SL80S40A	FAST RECOVER DIODE
SL8N65F	N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SL8205 N-Channel Power MOSFET Symbol VDS ID(Ta=25℃) ID(Ta=70℃) IDM VGS PD(Ta=25℃) TJ,TSTG RθJA Rating 20 6 4.8 20 ±8.0 1.14 -55 to 150 110 Unit V A A A V W ℃ ℃/ W /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS(Tj=25℃) VDS=20V VGS=0V IDSS(Tj=70℃) VDS=16V VGS=0V IGSS VGS=±10V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=4.5V VGS=2.5V ID=6.0A ID=5.2A gFS VDS=10V ID=6.0A VSD VGS=0V IS=1.7A Ciss Coss VDS=20V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDS=10V ID=1A RD=10Ω VGS=5V RG=6Ω tf Min 20 0.5 Typ Max 20 1035 320 150 30 70 40 65 1 25 ±100 1.5 28 38 1.2 Unit V μA μA nA V mΩ mΩ S V pF pF pF ns ns ns ns :，。 Purpose: Use as a Battery protection or in other Switching application. :， RDS(on)，， 2.