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SD11710 - 700V SiC N-Channel Power MOSFET

General Description

700V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VALUE VDS Drain-Source Voltage VGS Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation Linear Derating Factor TC = 25°C T

Key Features

  • ID = 50A RDS(ON) = 15mΩ.

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Datasheet Details

Part number SD11710
Manufacturer Solitron Devices
File Size 463.34 KB
Description 700V SiC N-Channel Power MOSFET
Datasheet download datasheet SD11710 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KEY FEATURES ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW GATE CHARGE FAST SWITCHING SPEED DUE TO LOW INTERNAL GATE RESISTANCE (ESR) STABLE OPERATION AT HIGH JUNCTION TEMPERATURE, TJ(MAX) = 175 °C FAST AND RELIABLE BODY DIODE SUPERIOR AVALANCHE RUGGEDNESS ROHS COMPLIANT SD11710 700V SiC N-Channel Power MOSFET - 1 VDS = 700V 2-D ID @ 25°C = 140A RDS(on) = 15mΩ 1-G 3-S ORDERING GUIDE Part Number SD11710 Description 700V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VALUE VDS Drain-Source Voltage VGS Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current * PD Maximum Power Dissipation Linear Derating Factor