SD11710 Description
pulse width and case temperature limited by maximum junction temperature. +1 561-848-4311 .solitrondevices. SD11710 700V SiC N-Channel Power MOSFET - 2 , STATIC (TJ = 25°C) SYMBOL CHARACTERISTIC V(BR)DSS Drain-Source Breakdown Voltage RDS (on) Drain-source on resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Threshold Voltage Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current...
SD11710 Key Features
- Repetitive rating: pulse width and case temperature limited by maximum junction temperature
- VGS(th)
- Pulse test: pulse width < 380 µs, duty cycle < 2%