Datasheet Summary
KEY Features
ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW GATE CHARGE FAST SWITCHING SPEED DUE TO LOW INTERNAL GATE RESISTANCE (ESR) STABLE OPERATION AT HIGH JUNCTION TEMPERATURE, TJ(MAX) = 175 °C FAST AND RELIABLE BODY DIODE SUPERIOR AVALANCHE RUGGEDNESS ROHS PLIANT
700V SiC N-Channel Power MOSFET
- 1
VDS = 700V
2-D
ID @ 25°C = 140A
RDS(on) = 15mΩ
1-G
3-S
ORDERING GUIDE
Part Number SD11710 Description 700V SiC N-Channel Power MOSFET
ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC
VALUE
Drain-Source Voltage
Gate-Source Voltage (dynamic) lD
Continuous...