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CXG1108K - Power Amplifier Module for JCDMA

General Description

The CXG1108K is the power amplifier module which operates at a single power supply.

This IC is designed using the Sony’s original p-Gate HFET process.

Key Features

  • Single power supply operation: VDD1 = VDD2 = 3.5V, VGG = 2.95V (@High mode), VGG = 2.7V (@Low mode).
  • Ultrasmall package: 0.065cc (6.2mm × 6.2mm × 1.7mm).
  • High efficiency: ηadd = 37.5% (@900MHz, POUT = 27dBm).
  • Output power (high/low mode switching supported): POUT ≤ 17dBm: Low mode (VGG = 2.7V) POUT = 17 to 27dBm: High mode (VGG 2.95V).
  • Gain: Gp = 26dB (@900MHz).

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Full PDF Text Transcription (Reference)

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CXG1108K Power Amplifier Module for JCDMA Description The CXG1108K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process. Features • Single power supply operation: VDD1 = VDD2 = 3.5V, VGG = 2.95V (@High mode), VGG = 2.7V (@Low mode) • Ultrasmall package: 0.065cc (6.2mm × 6.2mm × 1.7mm) • High efficiency: ηadd = 37.5% (@900MHz, POUT = 27dBm) • Output power (high/low mode switching supported): POUT ≤ 17dBm: Low mode (VGG = 2.7V) POUT = 17 to 27dBm: High mode (VGG 2.95V) • Gain: Gp = 26dB (@900MHz) Applications Power amplifier for JCDMA system cellular phones Structure p-Gate HFET module Recommended Operating Conditions VDD = 3.3 to 4.2V VGG = 2.95V±1% (High Mode) 2.