CXG7001FN Datasheet | Sony Semiconductor Solutions

Description The CXG7001FN is a MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony’s Ga As J-FET process featuring a single positive power supply operation. Features - Operates at a single positive power supply: VDD = 3V - Small mold package: 26-pin HSOF <Power amplifier/antenna switch transmitter block > - Low current consumption: IDD = 150m A (POUT = 20.2d Bm, f = 1.9GHz) - High power gain: Gp = 39d B Typ. (POUT = 20.2d Bm, f = 1.9GHz) <Antenna switch receiver block/ low noise down conversion mixer> - Low current consumption: IDD = 5.5m A Typ. (When no signal) - High conversion gain: Gc = 20.5d B Typ. (f = 1.9GHz) - Low distortion: Input IP3 = - 13d Bm Typ. (f = 1.9GHz) - High image suppression ratio: IMR = 40d Bc Typ. (f = 1.9GHz) - High 1/2 IF suppression ratio: 1/2IFR = 44d Bc Typ. (f = 1.9GHz) Applications Japan digital cordless telephones (PHS) Structure Ga As J-FET MMIC 26 pin HSOF (Plastic) .. Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Absolute Maximum Ratings <Power amplifier block> - Supply voltage VDD - Voltage between gate and source VGSO - Gain control voltage VPCTL - Drain current IDD - Allowable power dissipation PD <Switch block> Control voltage <Front-end block> - Supply voltage - Input power 6 1.5 2.5 550 3 V V V m A W VCTL VDD PRF 6 +10 V d Bm <mon to each block> - Channel temperature Tch - Operating temperature Topr - Storage temperature Tstg - 35 to +85 - 65 to +150 °C °C °C Remended Operating Conditions <mon to each block> - Supply voltage VDD <Power amplifier block> - Gain control voltage VPCTL <Switch...