CXK582000TM Description
The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
CXK582000TM Key Features
- Fast access time (Access time) -85LL 85ns (Max.) -10LL 100ns (Max.)
- Low standby current 40µA (Max.)
- Low data retention current 24µA (Max.)
- Single +5V supply: 4.5V to 5.5V
- Low voltage date retention : 2.0V (Min.)