CXK582000YM Datasheet | Sony Semiconductor Solutions

CXK582000TM/YM/M -85LL/10LL 262144-word × 8-bit High Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package line-up. The CXK582000TM/YM/M is a suitable RAM for portable equipment with battery back up. Features - Fast access time (Access time) -85LL 85ns (Max.) -10LL 100ns (Max.) - Low standby current 40µA (Max.) - Low data retention current 24µA (Max.) - Single +5V supply: 4.5V to 5.5V. - Low voltage date retention : 2.0V (Min.) - Broad package line-up CXK582000TM/YM 8mm × 20mm 32 pin TSOP Package CXK582000M 525mil 32 pin SOP Package Function 262144 word x 8 bit static RAM Structure Silicon gate CMOS IC Preliminary CXK582000YM 32 pin TSOP (PIastic) For the availability of this product, please contact the sales office. CXK582000TM 32 pin TSOP (PIastic) CXK582000M 32 pin SOP (PIastic) Block Diagram A10 A11 A9 A8 A13 A15 A17 A16 A14 A12 A7 Buffer Row Decoder Memory Matrix 2048 × 1024 VCC GND A6 A5 A4 A3 A2 A1 A0 OE WE CE1 CE2 Buffer I /O Gate Column Decoder Buffer I /O Buffer I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E94234-ST CXK582000TM/YM/M Pin Configuration (Top View) A11 A9 A8 A13 WE CE2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 A4 A5 A6 A7 A12 A14 A16 A17 Vcc A15 CE2 WE A13 A8 A9...