CXK5B16120J Datasheet | Sony Semiconductor Solutions

CXK5B16120J/TM -12 65536-word × 16-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B16120J/TM is a high speed 1M bit Bi CMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. Features - Single 3.3V Supply 3.3V±0.3V - Fast access time 12ns (Max.) - Low stand-by current: 10m A (Max.) - Low power operation 972m W (Max.) - Package line-up Dual Vcc/Vss CXK5B16120J 400mil 44pin SOJ Package CXK5B16120TM 400mil 44pin TSOP Package CXK5B16120J 44 pin SOJ (Plastic) CXK5B16120TM 44 pin TSOP (Plastic) Function 65536-word × 16-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram A14 A15 A9 A8 A12 A13 A11 A10 Buffer Row Decoder Memory Vcc Matrix 256 × 4096 Pin configuration (Top View) A4 1 A3 2 A2 3 A1 4 A0 5 CE 6 GND I/O1 7 I/O2 8 I/O3 9 I/O4 1 0 Vcc 11 44 A5 43 A6 42 A7 41 OE 40 UB 39 LB 38 I/O16 37 I/O15 36 I/O14 35 I/O13 34 GND 33 Vcc 32 I/O12 31 I/O11 30 I/O10 29 I/O9 28 NC 27 A8 26 A9 25 A10 24 A11 23 NC Pin Description Symbol Description A0 to A15 Address input I/O1 to I/O8 Data input output (lower byte I/O) I/O9 Data input output to I/O16 (upper byte I/O) CE WE OE LB UB Vcc GND NC Chip enable input Write enable input Output enable input Lower byte select input Upper byte select input +3.3V Power supply Ground No connection A5 A4 A3 A0 A2 A1 A6 A7 UB LB WE OE CE I/O1 I/O16 I/O Buffer Buffer I/O Gate Column Decoder GND 12 I/O5 13 I/O6 14 I/O7 15 I/O8 16 WE 17 A15 18 A14 19 A13 20 A12 21 NC 22 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these...