CXK5B81020TM Datasheet | Sony Semiconductor Solutions

CXK5B81020J/TM -12 131072-word × 8-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B81020J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. Features - Single 3.3V power supply: 3.3V ± 0.3V - Fast access time 12ns (Max.) - Low standby current: 10m A (Max.) - Low power operation 864m W (Max.) - Package line-up Dual Vcc/Vss CXK5B81020J 400mil 32pin SOJ package CXK5B81020TM 400mil 32pin TSOP package CXK5B81020J 32 pin SOJ (PIastic) CXK5B81020TM 32 pin TSOP (PIastic) Function 131072 word × 8-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram A15 A16 A9 A8 A13 A14 A11 A10 Buffer Row Decoder Memory Matrix 256 × 4096 Pin Configuration (Top View) Pin Description Symbol A0 to A16 I/O1 to I/O8 CE WE OE VCC GND NC Description Address input Data input Chip enable input Write enable input Output enable input +3.3V power supply Ground No connection A3 Vcc A2 A1 A0 CE GND 1 2 3 4 5 32 A4 31 A5 30 A6 29 A7 28 OE 27 I/O8 26 I/O7 25 GND 24 Vcc 23 I/O6 22 I/O5 2 A8 1 20 A9 19 A10 18 A11 17 A12 I/O1 6 I/O2 7 Vcc GND 9 A12 A5 A4 A3 A0 A2 A1 A6 A7 Buffer I/O Gate Column Decoder I/O3 1 I/O4 11 WE 12 A16 13 A15 14 A14 15 A13 16 WE OE CE I/O Buffer I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E93707B58-PP CXK5B81020J/TM...