CXK5T8257BM-10LLX Datasheet | Sony Semiconductor Solutions

CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word × 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. Special feature are low power consumption and high speed. The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features - Extended operating temperature range: - 25 to +85°C - Wide supply voltage range operation: 2.7 to 3.6V - Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) - Low standby current: 7.0µA (Max.) - Low power data retention: 2.0V (Min.) - Available in many packages CXK5T8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5T8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Silicon gate CMOS IC CXK5T8257BTM 28 pin TSOP (Plastic) CXK5T8257BYM 28 pin TSOP (Plastic) CXK5T8257BM 28 pin SOP (Plastic) Block Diagram A14 A13 A12 A11 A9 A8 A7 A6 A5 Buffer Row Decoder Memory Matrix 512 × 512 A10 A4 A3 A2 A1 A0 Buffer I/O Gate Column Decoder OE Buffer WE I/O Buffer CE I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- PE96509-ST CXK5T8257BTM/BYM/BM Pin Configuration (Top View) OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2 A14 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 A3 A4 A5 A6 A7 A12 A14 VCC WE A13 A8 A9 A11 OE 7 6 5 4 3 2 1 28 27...