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CXK5T8257BM - 32768-word X 8-bit High Speed CMOS Static RAM

Datasheet Summary

Description

The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.

Special feature are low power consumption and high speed.

The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up.

Features

  • Extended operating temperature range:.
  • 25 to +85°C.
  • Wide supply voltage range operation: 2.7 to 3.6V.
  • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max. ) -12LLX 120ns (Max. ) 3.3V operation -10LLX 85ns (Max. ) -12LLX 100ns (Max. ).
  • Low standby current: 7.0µA (Max. ).
  • Low power data retention: 2.0V (Min. ).
  • Available in many packages CXK5T8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5T8257BM 450mil 28 pin SOP Package Func.

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Datasheet Details

Part number CXK5T8257BM
Manufacturer Sony Corporation
File Size 209.29 KB
Description 32768-word X 8-bit High Speed CMOS Static RAM
Datasheet download datasheet CXK5T8257BM Datasheet
Additional preview pages of the CXK5T8257BM datasheet.

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Full PDF Text Transcription

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CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word × 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. Special feature are low power consumption and high speed. The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) • Low standby current: 7.0µA (Max.) • Low power data retention: 2.0V (Min.
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