CXK5V8257BTM-70LL Datasheet | Sony Semiconductor Solutions

CXK5V8257BTM/BYM/BM -70LL/10LL 32768-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL patible (All inputs and outputs). And special feature are, low power consumption, high speed and broad package line-up. The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features - Single +3.3V supply: 3.3V ±0.3V - Directly LVTTL patible: All inputs and outputs - Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max.) -10LL 100ns (Max.) - Low standby current: CXK5V8257BTM/BYM/BM -70LL/10LL 3.5µA (Max.) - Low power data retention: 2.0V (Min.) - Available in many packages CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5V8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Silicon gate CMOS IC CXK5V8257BTM 28 pin TSOP (Plastic) CXK5V8257BYM 28 pin TSOP (Plastic) CXK5V8257BM 28 pin SOP (Plastic) Block Diagram A14 A13 A12 A11 A9 A8 A7 A6 A5 A10 A4 A3 A2 A1 A0 OE WE CE I /O1 I /O8 Buffer Row Decoder Memory Matrix 512 × 512 VCC GND Buffer I /O Gate Column Decoder Buffer I /O Buffer Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E93836A5Z-ST CXK5V8257BTM/BYM/BM Pin Configuration (Top View) OE A11 A9 A8 A13 WE Vcc A14 A12 A7 A6 A5 A4 A3 A3 A4 A5 A6 A7 A12 A14 Vcc WE A13 A8 A9 A11 OE 22 23 24 25 26 27 28 1 2 3 4 5 6...