CXK5V8257BTM Description
The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL patible (All inputs and outputs).
CXK5V8257BTM Key Features
- Single +3.3V supply: 3.3V ±0.3V
- Directly LVTTL patible: All inputs and outputs
- Low standby current: CXK5V8257BTM/BYM/BM -70LL/10LL 3.5µA (Max.)
- Low power data retention: 2.0V (Min.)