CXK77B3610GB-6 Overview
The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC.
CXK77B3610GB-6 Key Features
- Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz
- Inputs and outputs are LVTTL/LVCMOS patible
- Single 3.3V power supply: 3.3V ± 0.15V
- Byte-write possible
- OE asynchronization
- JTAG test circuit
- Package 119TBGA
- 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latc