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CXK77B3610GB-7 - High Speed Bi-CMOS Synchronous Static RAM

General Description

The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits.

Key Features

  • the delayed write system to reduce the dead cycles. Features.
  • Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz.
  • Inputs and outputs are LVTTL/LVCMOS compatible.
  • Single 3.3V power supply: 3.3V ± 0.15V.
  • Byte-write possible.
  • OE asynchronization.
  • JTAG test circuit.
  • Package 119TBGA.
  • 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Regi.

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Full PDF Text Transcription (Reference)

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CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features • Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz • Inputs and outputs are LVTTL/LVCMOS compatible • Single 3.3V power supply: 3.3V ± 0.