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CXK77B3610GB - High Speed Bi-CMOS Synchronous Static RAM

This page provides the datasheet information for the CXK77B3610GB, a member of the CXK77B3610GB- High Speed Bi-CMOS Synchronous Static RAM family.

Datasheet Summary

Description

32768 words by 36 bits.

Features

  • the delayed write system to reduce the dead cycles. Features.
  • Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz.
  • Inputs and outputs are LVTTL/LVCMOS compatible.
  • Single 3.3V power supply: 3.3V ± 0.15V.
  • Byte-write possible.
  • OE asynchronization.
  • JTAG test circuit.
  • Package 119TBGA.
  • 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru m.

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Datasheet preview – CXK77B3610GB

Datasheet Details

Part number CXK77B3610GB
Manufacturer Sony
File Size 199.29 KB
Description High Speed Bi-CMOS Synchronous Static RAM
Datasheet download datasheet CXK77B3610GB Datasheet
Additional preview pages of the CXK77B3610GB datasheet.

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Full PDF Text Transcription

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CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3610GB-6/7 is a high speed 1M bit 119 pin BGA (Plastic) Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features • Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz • Inputs and outputs are LVTTL/LVCMOS compatible • Single 3.3V power supply: 3.3V ± 0.
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