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CXK77B3610GB - High Speed Bi-CMOS Synchronous Static RAM

Download the CXK77B3610GB datasheet PDF. This datasheet also covers the CXK77B3610GB- variant, as both devices belong to the same high speed bi-cmos synchronous static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

32768 words by 36 bits.

Key Features

  • the delayed write system to reduce the dead cycles. Features.
  • Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz.
  • Inputs and outputs are LVTTL/LVCMOS compatible.
  • Single 3.3V power supply: 3.3V ± 0.15V.
  • Byte-write possible.
  • OE asynchronization.
  • JTAG test circuit.
  • Package 119TBGA.
  • 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru m.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CXK77B3610GB-_SonyCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CXK77B3610GB-6 High Speed Bi-CMOS Synchronous Static RAM Sony Corporation
CXK77B3610GB-7 High Speed Bi-CMOS Synchronous Static RAM Sony Corporation
CXK77B3611AGB-5 High Speed Bi-CMOS Synchronous Static RAM Sony Corporation
CXK77B3611AGB-6 High Speed Bi-CMOS Synchronous Static RAM Sony Corporation
CXK77B1810AGB High Speed Bi-CMOS Synchronous Static RAM Sony Corporation

Other Datasheets by Sony Semiconductor Solutions

Part Number Description
CXK77B3611AGB High Speed Bi-CMOS Synchronous Static RAM
CXK1005P 512-Bit Non-Volatile Memory
CXK1007P 1024-Bit Non-Volatile Memory
CXK1009P 2048-Bit Non-Volatile Memory
CXK541000J High Speed CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3610GB-6/7 is a high speed 1M bit 119 pin BGA (Plastic) Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features • Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz • Inputs and outputs are LVTTL/LVCMOS compatible • Single 3.3V power supply: 3.3V ± 0.