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CXK77B3611AGB - High Speed Bi-CMOS Synchronous Static RAM

Download the CXK77B3611AGB datasheet PDF. This datasheet also covers the CXK77B3611AGB- variant, as both devices belong to the same high speed bi-cmos synchronous static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits.

Key Features

  • the delayed write system to reduce the dead cycles. 119 pin BGA (Plastic) Features.
  • Fast cycle time (Cycle) (Frequency) CXK77B3611AGB-5 5ns 200MHz -6 6ns 167MHz.
  • Inputs and outputs are GTL/HSTL compatible.
  • Controlled Impedance Driver.
  • Single 3.3V power supply: 3.3V±0.15V.
  • Byte-write possible.
  • OE asynchronization.
  • JTAG test circuit.
  • Package 119TBGA.
  • 4 kinds of synchronous operation mode Register-Regi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CXK77B3611AGB-_SonyCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. 119 pin BGA (Plastic) Features • Fast cycle time (Cycle) (Frequency) CXK77B3611AGB-5 5ns 200MHz -6 6ns 167MHz • Inputs and outputs are GTL/HSTL compatible • Controlled Impedance Driver • Single 3.3V power supply: 3.3V±0.