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CXK77B3611AGB - High Speed Bi-CMOS Synchronous Static RAM

This page provides the datasheet information for the CXK77B3611AGB, a member of the CXK77B3611AGB- High Speed Bi-CMOS Synchronous Static RAM family.

Datasheet Summary

Description

Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits.

Features

  • the delayed write system to reduce the dead cycles. 119 pin BGA (Plastic) Features.
  • Fast cycle time (Cycle) (Frequency) CXK77B3611AGB-5 5ns 200MHz -6 6ns 167MHz.
  • Inputs and outputs are GTL/HSTL compatible.
  • Controlled Impedance Driver.
  • Single 3.3V power supply: 3.3V±0.15V.
  • Byte-write possible.
  • OE asynchronization.
  • JTAG test circuit.
  • Package 119TBGA.
  • 4 kinds of synchronous operation mode Register-Regi.

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Datasheet preview – CXK77B3611AGB

Datasheet Details

Part number CXK77B3611AGB
Manufacturer Sony
File Size 81.60 KB
Description High Speed Bi-CMOS Synchronous Static RAM
Datasheet download datasheet CXK77B3611AGB Datasheet
Additional preview pages of the CXK77B3611AGB datasheet.

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Full PDF Text Transcription

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CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. 119 pin BGA (Plastic) Features • Fast cycle time (Cycle) (Frequency) CXK77B3611AGB-5 5ns 200MHz -6 6ns 167MHz • Inputs and outputs are GTL/HSTL compatible • Controlled Impedance Driver • Single 3.3V power supply: 3.3V±0.
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