Part CXK77B3611AGB-6
Description High Speed Bi-CMOS Synchronous Static RAM
Manufacturer Sony Semiconductor Solutions
Size 81.60 KB
Sony Semiconductor Solutions
CXK77B3611AGB-6

Overview

  • Fast cycle time (Cycle) (Frequency) CXK77B3611AGB-5 5ns 200MHz -6 6ns 167MHz
  • Inputs and outputs are GTL/HSTL compatible
  • Controlled Impedance Driver
  • Single 3.3V power supply: 3.3V±0.15V
  • Byte-write possible
  • OE asynchronization
  • JTAG test circuit
  • Package 119TBGA
  • 4 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latch mode (R-L mode) Dual clock mode (D-C mode) Preliminary For the availability of this product, please contact the sales office. 119 pin BGA (Plastic) Function 32768 word x 36bit High Speed Bi-CMOS Synchronous SRAM Structure Silicon gate Bi-CMOS IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- PE96812