• Part: DM-231
  • Description: Magnetoresistance Element
  • Manufacturer: Sony Semiconductor Solutions
  • Size: 96.46 KB
DM-231 Datasheet (PDF) Download
Sony Semiconductor Solutions
DM-231

Description

DM-231 a magnetic sensor using magnetoresistance effect is posed of ferromagnetic material deposited by evaporation on a silicon substrate.

Key Features

  • Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.) at VCC=5 V, H=14400 A/m
  • Fitted with bias magnet: stable output
  • Non-contact angle of rotation detection
  • Contactless potentiometer. - Supply voltage VCC 10
  • Storage temperature Tstg -30 to +100 M-118 (Plastic) V °C Remended Operating Conditions
  • Supply voltage VCC 5
  • 2- DM-231 Basic Application Rotation angular detection S N 2 1 3 4 Out put Differential amplifier Out put H=14400A/m 231
  • 90° 0° 90° Magnetic field angle θ H θ Magnetic field angle θ Handling precautions