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DM-232 - Magnetoresistance Element

Description

DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.

It is suitable for angle of rotation detection.

Features

  • Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min. ) at VCC=5 V, H=14400 A/m.
  • Fitted with bias magnet: stable output.
  • High reliability: Achieved through silicon nitride protective film. Structure Ferromagnetic thin film circuit (With ferrite magnet).

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DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is suitable for angle of rotation detection. Features • Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.) at VCC=5 V, H=14400 A/m • Fitted with bias magnet: stable output. • High reliability: Achieved through silicon nitride protective film. Structure Ferromagnetic thin film circuit (With ferrite magnet) Applications • Non-contact angle of rotation detection. • Contactless potentiometer.
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