ST1413AC Datasheet PDF | Stanson Technology

Stanson Technology ST1413AC

The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Part No.	ST1413AC
Datasheet	ST1413AC Download
Manufacturer	Stanson Technology
Description	P Channel Enhancement Mode MOSFET
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DESCRIPTION

ST1413AC These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOD-353 (SC-70) FEATURE z -20V/-3.4A, RDS(ON) = 130m-ohm @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 150m-ohm @VGS = -2.5V z - 20V/-1.7A, RDS(ON) = 190m-ohm @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-353 (SC-70) package design D D D S G 1.4.5.Drain 2.Gate 3.Source 1AYW 1A : Part Marking Y : Year Code W : Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 P Channel Enhancement Mode MOSFET -3.4A ST1413AC ABSOULTE

MAXIMUM RATINGS

(Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Symbol VDSS VGSS ID IDM IS PD...