ST3400S23RG Overview
Description
The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.
Key Features
- 55/150 RθJA 90 Unit V V A A A W ℃ ℃ ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA STN3400S23RG
- V1 ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A
