ST3400S23RG datasheet by Stanson Technology.
| Part number | ST3400S23RG |
|---|---|
| Datasheet | ST3400S23RG-StansonTechnology.pdf |
| File Size | 394.51 KB |
| Manufacturer | Stanson Technology |
| Description | N-Channel Enhancement Mode MOSFET |
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The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high side switching.
View all Stanson Technology datasheets
| Part Number | Description |
|---|---|
| ST3400SRG | N-Channel Enhancement Mode MOSFET |
| ST3400 | N Channel Enhancement Mode MOSFET |
| ST3401 | P-Channel Enhancement Mode MOSFET |
| ST3401M23RG | P-Channel Enhancement Mode MOSFET |
| ST3401SRG | P-Channel Enhancement Mode MOSFET |
| ST3402 | N Channel Enhancement Mode MOSFET |
| ST3403 | P Channel Enchancement Mode MOSFET |
| ST3406 | N Channel Enhancement Mode MOSFET |
| ST3406SRG | N Channel Enhancement Mode MOSFET |
| ST3407 | P Channel Enhancement Mode MOSFET |
