ST3400S23RG Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L A0YA Y: Year Code A: Week Code FEATURE 30V/5.8A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V 30V/4.8A, RDS(ON) = 33mΩ @VGS = 4.5V 30V/4.0A, RDS(ON) = 40mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 120 Bentley Square, Mountain View, Ca 94040 USA http://.stnasontech. STN3400S23RG 2006. V1 N Channel Enhancement Mode MOSFET 5.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±12 Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ 5.8 3.5 Pulsed Drain...