ST3401M23RG Overview
Description
ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- 30V/-4.0A, RDS(ON) = 53mΩ (Typ.) @VGS = -10V
- V1 ST3401M23RG P Channel Enhancement Mode MOSFET
- 30 ±12 -4.0 -3.2 -15 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ
- 1.0 1.25 0.8 150 Storage Temperature Range TSTG
- 55/150 RθJA 120 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STP3401M23RG
