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ST3401M23RG - P-Channel Enhancement Mode MOSFET

Description

ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST3401M23RG
Manufacturer Stanson Technology
File Size 165.58 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST3401M23RG Datasheet

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Full PDF Text Transcription

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ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 3 D G S 1 2 1.Gate 2.Source 3.Drain -30V/-4.0A, RDS(ON) = 53mΩ (Typ.) @VGS = -10V -30V/-3.2A, RDS(ON) = 60mΩ @VGS = -4.
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