ST3407S23RG Overview
Description
ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- V1 ST3407S23RG P Channel Enhancement Mode MOSFET
- 30 ±20 -3.6 -3.0 -15 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ
- 1.0 1.25 0.8 150 Storage Temperature Range TSTG RθJA
- 55/150 120 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST3407S23RG
- V1 ST3407S23RG P Channel Enhancement Mode MOSFET
