ST3414S23RG Datasheet | Stanson Technology

DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D GS 12 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L FEATURE z 20V/4.2A, RDS(ON) = 40mΩ ( Typ.) @VGS = 4.5V z 20V/3.4A, RDS(ON) = 55 mΩ @VGS = 2.5V z 20V/2.8A, RDS(ON) = 75 mΩ @VGS = 1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 14YA Y: Year Code A: Week Code ORDERING INFORMATION Part Number Package Part Marking SOT-23 14YA ※ Week Code : A ~ Z ; a ~ z ※ ST3414S23RG : S23 : SOT23-3L R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. ST3414 2006. V1 ST3414 N Channel Enhancement Mode MOSFET 4.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM ±12 4.0 3.2 30 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ 1.25...