ST3414S23RG Overview
Description
ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench high density process is especially tailored to minimize on-state devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
Key Features
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- 55/150 RθJA 125 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST3414
- V1 ST3414 N Channel Enhancement Mode MOSFET 4.0A
