ST3414S23RG datasheet by Stanson Technology.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ST3414S23RG |
|---|---|
| Datasheet | ST3414S23RG ST3414 Datasheet (PDF) |
| File Size | 367.73 KB |
| Manufacturer | Stanson Technology |
| Description | MOSFET |
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ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are...
View all Stanson Technology datasheets
| Part Number | Description |
|---|---|
| ST3414 | MOSFET |
| ST3414A | 3A N-Channel Enhancement Mode MOSFET |
| ST3413 | P Channel Enhancement Mode MOSFET |
| ST3413A | MOSFET |
| ST3400 | N Channel Enhancement Mode MOSFET |
| ST3400S23RG | N-Channel Enhancement Mode MOSFET |
| ST3400SRG | N-Channel Enhancement Mode MOSFET |
| ST3401 | P-Channel Enhancement Mode MOSFET |
| ST3401M23RG | P-Channel Enhancement Mode MOSFET |
| ST3401SRG | P-Channel Enhancement Mode MOSFET |
