ST9401 Datasheet PDF | Stanson Technology

Stanson Technology ST9401

ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

Part No.	ST9401
Datasheet	ST9401 Download
Manufacturer	Stanson Technology
Description	P-Channel MOSFET
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DESCRIPTION

PIN CONFIGURATION SOT-23 FEATURE 3 D G 1 1.Gate 2.Source S 2 3.Drain -20V/-2.8A, RDS(ON) = 85mΩ @VGS = -4.5V -20V/-2.0A, RDS(ON) = 120mΩ @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PART MARKING SOT-23 3 S01YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST9401SRG Package SOT-23 Part Marking S01YA ※ Process Code ∶ A ~ Z ; a ~ z ※ ST9401SRG ∶ S : SOT23 R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST9401 2005. V1 ST9401 P Channel Enhancement Mode MOSFET -3.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃...