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ST9401 - P-Channel MOSFET

Description

ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as ce

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Datasheet Details

Part number ST9401
Manufacturer Stanson Technology
File Size 381.10 KB
Description P-Channel MOSFET
Datasheet download datasheet ST9401 Datasheet

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www.DataSheet.in ST9401 P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE � 3 D G 1 1.Gate 2.Source S 2 3.Drain � � � � -20V/-2.8A, RDS(ON) = 85mΩ @VGS = -4.5V -20V/-2.0A, RDS(ON) = 120mΩ @VGS = -2.
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